A method has been developed for the determination of Al, Cd, Cr, Cu, Fe, Mg, Mn, Ni, Sb, Sn and Zn at trace levels in high purity di-boron trioxide using ETAAS. The boron trioxide matrix was eliminated as trimethyl borate ester in a multiplex vapor phase matrix extraction (MVPME) device using a mixture of glycerol and methanol. In this MVPME device, in situ reagent purification, sample digestion and simultaneous matrix elimination were achieved by a single step in closed condition, which in combined effect reduce the process blanks. The matrix extraction procedure allows determination of trace elemental impurities by electrothermal atomic absorption spectrometry (ETAAS) with fast furnace analysis (without an ashing step and modifier) and calibration against aqueous standards. The performance and accuracy of the vapor phase matrix elimination technique are compared to those of suprapur grade hydrofluoric acid solution in two ways; (i) matrix separation as BF₃ over hot plate and (ii) in situ matrix elimination inside graphite furnaces. The method detection limits calculated from blank samples are in the range of 0.5 (Ni) and 2.9 (Al) ng g⁻¹. Thus the MVPME-based sample preparation approach is well suited for the trace analysis of high purity di-boron trioxide used in microelectronics applications.