BARC/PUB/2016/0785

 
 

Effect of sputtering power on MgF2 thin films deposited by sputtering technique under fluorine trapping

 
     
 
Author(s)

De, R.; Haque, S. M.; Tripathi, S.; Prathap, C.; Rao, K. D.; Sahoo, N. K.
(A&MPD)

Source

AIP Conference Proceedings, 2016. Vol. 1731: pp. 080078.1-080078.3

ABSTRACT

A non-conventional magnetron sputtering technique was explored to deposit magnesium fluoride thin films using the concept of fluorine gas trapping without the introduction of additional fluorine gas flow inside the chamber. The effect of magnetron power from 50 W to 250 W has been explored on structural, optical and physical properties of the samples. Polycrystalline nature with tetragonal crystallinity of the films has been confirmed by GIXRD measurements along with thickness dependency. Monotonic increase of attenuation coefficient (k) with RF power has been explained in terms of target compound dissociation probability. In conclusion, with fluorine trapping method, the samples deposited at lower RF powers (<100 W) are found to be more suitable for optical applications.

 
 
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