We have developed an integrated ΔE–E silicon detector telescope using silicon planar technology. Standard integrated circuit technology involving double-sided wafer processing has been used to realize two detectors on a single chip. The ΔE detector is fabricated in epitaxial layer of thicknesses of 10, 15, or 25 μm deposited over the high resistivity silicon wafers of thicknesses of 300μm. The E detector is fabricated in the base wafer, resulting in a thickness of 300 μm. The detector with the E detector of thickness of 10 μm and E detector of thickness 300 μm has been characterized for light and heavy ions using the Lohengrin fission fragment separator at Institute Laue-Langevin (ILL), Grenoble, France. The results demonstrate the suitability of the integrated detector for identification of fission fragments and their energy measurement. The detect or response was precisely characterized by a nuclear charge dependent approach, which differs from the usual mass-dependent characterization.