We report a first-principle investigation of the structure and electronic properties of small Si_n (n = 1−6, 9) clusters deposited on the Au(111) and Ag(111) surfaces. The calculations were performed using a plane wave based pseudopotential method under the framework of density functional theory. The results reveal the preference of Si atom to be adsorbed on the h.c.p. site of the metal (111) surfaces with strong binding energy. We study monolayer (ML) deposition as well as the cluster deposition on both the surfaces. The clusters introduce interlayer forces in the adsorbate. Based on PDOS (projected density of states) analysis it is found that Si atoms acquire charges from the Au/Ag surface. The binding energies are consistent with the known cohesive energy of Ag and Au silicides. The planar Sin cluster deposition on metal surfaces show that Au provides an adjustable surface with relatively strong Au-Si interaction while Ag-Si relatively weak interaction leading to dimerization of Si. The strong bonding with the surface atoms is a result of p-d hybridization. Some of the 3-D clusters show shape distortions after deposition on metal surfaces. This leads to internal stresses after deposition. A statistical parameter is defined over PDOS. It helps to measure the state delocalization in energy. Implications of the Si-Metal interaction on the initial stages of growth are discussed.