Diamond films have been deposited on silicon single crystals from CH3 COCH3 –H2 mixtures by hot filament chemical vapor deposition (HFCVD) method and are subsequently analyzed for the presence of impurities using a number of analytical techniques. The bulk concentration for O2 is found to be ~1 at.% and that for silicon and hydrogen is ~0.07 at.% and ~3 at.%, respectively. Nitrogen level remains below the detection limit for both Secondary ion mass pectrometry (SIMS) and Ion beamanalysis (IBA) techniques and could only be detected from micro-photoluminescence studies. Concentration levels of these impurities as a function of depth within the film have been investigated. Their possible configurations and the different modes of their incorporation into the films have been explored in the light of diamond deposition mechanism.