Materials with tunable optical and photoelectric properties are prerequisite for the development of highly stable, economical and efficient dye sensitized solar cells (DSSCs). In this direction, improved plasmonic DSSCs with comparatively higher light harvesting ability and reduced recombination of photo-generated charge carriers have been fabricated using low energy (120 KeV) Ag ion implanted TiO₂ photoanodes at variable fluence. Herein, the origin of improved photovoltaic performance of Ag implanted DSSCs against conventional DSSC has been explained using UV-visible, photoluminescence and kelvin probe measurements. Further, the efficient interfacial charge transportation within Ag implanted DSSCs has been demonstrated through EIS measurements.