An integrated ΔE–E silicon detector telescope using silicon planar technology has been developed. The technology developed is based on standard integrated circuit technology and involves double sided wafer processing. The ΔE and E detectors have been realized in a PIN configuration with a common buried N⁺ layer. Detectors with ΔE thicknesses of 10, 15 and 25 mm, and E detector with thickness of 300 μm have been fabricated and tested with alpha particles using ²³⁸Pu–²³⁹Pu dual alpha source. The performance of the detector with ΔE detector of thickness 10 mm and E detector of thickness 300 mm has been studied for identification of charged particles using 12MeV ⁷Li⁺ ion beam on carbon target. The results of these tests demonstrate that the integrated detector telescope clearly separates the charged particles, such as alpha particles, protons and ⁷Li. Due to good energy resolution of the E detector, discrete alpha group sc or responding to well known states of ¹⁵N populated during the reaction could be clearly identified.