Extended X-ray absorption fine structure (EXAFS) and atomic force microscopy (AFM) studies are car-ried out on yttrium oxide (Y₂O₃) thin films deposited by radio frequency plasma assisted metalorganicchemical vapor deposition (MOCVD) process at different RF self-bias (−50 V to −175 V with a step of−25 V) on silicon substrates. A (2,2,6,6 tetramethyl-3,5-heptanedionate) yttrium (commonly known asY(thd)₃) precursor is used in a plasma of argon and oxygen gases at a substrate temperature of 350°C for deposition. To gain profound understanding about influence of RF self-bias on the properties of thedeposited Y₂O₃thin films, the films are characterized by EXAFS and AFM measurements. From the EXAFSmeasurements it is observed that oxygen co-ordination is high for the film deposited at the lowest selfbias (−50 V) which is due to presence of higher amount of hydroxyl group in the sample. Oxygen coordi-nation however decrease to lower values for the films deposited at self bias of −75 V. Y O bond length decreases gradually with increase in self bias indicating reduction in hydroxyl content. However thereis reduction in bond length for the film deposited at −100 V as compared to other films resulting fromstructural changes. The disorder factor obtained from EXAFS measurement increases for films depositedat voltages beyond −125 V due to degradation in crystallinity of the films caused by increased bombard-ment by incident ions. From AFM measurements, it is observed that the surface morphology of the filmsalso change with self bias. The root mean square roughness value and the entropy factor are found tobe low for films deposited at lower bias values and increase for films deposited at bias voltages above−100 V.