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Author(s) |
Alla, S. K.; Kollu, P.; Meena, S. S.; Poswal, H. K.; Prajapat, C. L.; and others (SSPD;HP&SRPD;TPD)
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Source |
Journal of Materials Science: Materials in Electronics, 2018. Vol. 29: pp. 10614-10623 |
ABSTRACT
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The single phase HfxCe1−xO2 (x = 0.01, 0.05 and 0.1) nanoparticles were produced via microwave refluxing technique. The substitution of Hf-ions into CeO2 lattice has been demonstrated by X-ray diffraction and transmission electron microscopy analyses. X-ray photoelectron spectroscopy analysis indicated that Ce was present in + 3 and + 4 states whereas Hf in + 4 state. Raman, UV–Vis and photoluminescence spectroscopic analyses revealed the formation of surface defects including oxygen vacancies in the samples. The estimated defect concentration was 1.09 × 1021, 1.32 × 1021 and 1.49 × 1021 cm−3 for x = 0.01, 0.05 and 0.1 samples respectively. The room temperature ferromagnetic behavior for the samples originate from the surface oxygen vacancies. The prevalence of ferromagnetic clusters considerably raised the MS value for x = 0.05 sample. The augmentation in the MS values with increased Hf concentration could be attributed to the increase in the defect concentration. |
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