In the current article, the influence of three different doses of gamma-rays on the thermally assisted crystal growth in a novel ternary chalcogenide glassy Se₇₈Te₂₀Sn₂ semiconductor has been reported in terms of the recrystallization.The iso-conversional kinetic approach is used in the present study. The variation of crystal growth rate with temperature obeys the Arrhenius relation for all the doses of gamma-rays irradiation. Further analysis confirms that pre-factor K₀ of crystal growth rate and the corresponding energy ΔE involved in thermally governed crystallization follows Meyer-Neldel compensation rule (MNCR). Further, we have observed a linear correlation i.e., Further Meyer-Neldel compensation rule (FMNCR) between Meyer-Neldel pre-factor K₀₀ and Meyer-Neldel energy kT₀. The observed correlations between these significant parameters (MNCR between K₀ & ΔE and FMNCR between K₀₀ & kT₀) may open a new gateway for revealing the external effects on crystal growth rate during the iso-conversional analysis of crystallization kinetics.