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Author(s) |
Pandey, R. M.; Naidu, B. S.; Sudarsan, V.; Pandey M.; Kshirasagar, R. J.; Vatsa, R. K. (ChD;HP&SRPD)
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Source |
AIP Conference Proceedings, 2014. Vol. 1591: pp. 426-428 |
ABSTRACT
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α- and β-Ga2O3 nanorods were prepared by heating the GaOOH, made via urea hydrolysis of Ga(NO3)3 at 70°C. SEM images confirm rod like morphology of these samples. XRD studies show formation of α-Ga2O3 and β- Ga2O3 at 500°C and 900°C respectively. This is further confirmed from the TG/DTA showing mass loss and heat evolution at these temperatures. Raman studies of GaOOH, α-Ga2O3 and β-Ga2O3 show systematic changes in their basic structural units as the different phases are formed. |
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