BARC/PUB/2019/0613

 
 

Distribution of multiple intrinsic defects in C doped α-Al2O3

 
     
 
Author(s)

Rao, K. S.; Salunke, H. G.; Muthe, K. P.; Kulkarni, M. S.
(RSSD)

Source

AIP Conference Proceedings, 2019. Vol. 2115: Article no. 030356

ABSTRACT

Carbon doped alumina (Al2O3:C) finds widespread use being a highly sensitive Optically Stimulated Dosimeter(OSL) phosphor. The enhanced sensitivity of this material is correlated with the number of anion vacancies produced during its synthesis. There have been a few studies which attempt to unravel the mechanism of this enhancement by looking at the effects of Al/O vacancy/substitution by C atoms. In this work, we find that there is a preferred inter-defect separation when producing two Al/O vacancies. The defect formation energies and density of states are also computed.

 
 
SIRD Digital E-Sangrahay