Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique onsilicon substrates at substrate temperature of 400_oC. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod)₃),  (2,7,7-trimethyl-3,5-octanedionate) zirconium (known asZr(tod)₄), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assistedMOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far.The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAXand spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer whiletribological property measurement has been done to study mechanical behavior of the coatings. Char-acterization by different techniques indicates that properties of the films are dependent on the yttriacontent as well as on the structure of the films.