Gas sensing characteristics of SnO₂ thin films prepared by RF sputtering have been investigated and compared to that of RGTO (Rheotaxially Grown and Thermally Oxidized) films. Both the sensor films exhibited a highly selective response towards H₂S with RF sputtered film showing better response characteristics. RF sputtered and RGTO films exhibited a maximum response of 54 and 15 towards 10 ppm of H₂S at an optimum operating temperature of 150 and 250°C, respectively. Sputtered films exhibited a linear response in the wide concentration range from 500 ppb to 500 ppm while RGTO films  were found to saturate for concentrations above 100 ppm. XPS investigations revealed that the RGTO films are more subestoichiometric or oxygen deficient than the sputtered films. Raman studies further indicates that the surface of sputtered and RGTO films are characterized by the presence of oxygen deficiency attributed to the “bridging-type” and deeper “in-plane/sub-bridging” oxygen vacancies, respectively. The improved response kinetics of the RF sputtered films is attributed to the presence of bridging type oxygen vacancies that facilitates the charge transfer between the sensor surface and H2S molecules.