Depth dependent Doppler broadening of annihilation radiation (DBAR) measurements are carried out for a sample of Li ion implanted in alumina. The effect of Li ion implantation and the subsequent isochronal annealing at the temperatures up to 1100 °C on the Doppler broadening annihilation parameters (S-parameter) are studied. The S-parameter around the Li implantation depth (~191 nm) increased with annealing temperature up to 700°C and reduced beyond. The results suggest possible Li cluster formation in annealed sample.