Diethyl germanium bis-picolinate, [Et₂Ge(O₂CC₅H₄N)₂], and trimethyl germanium quinaldate, [Me₃Ge(O₂CC₉H₆N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700^◦C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600^◦C yield GeO₂. Both Ge and GeO₂ films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (I–V) characterization.